Graphene electronic device and method of fabricating the same

ABSTRACT

The graphene electronic device may include a gate oxide on a conductive substrate, the conductive substrate configured to function as a gate electrode, a pair of first metals on the gate oxide, the pair of the first metals separate from each other, a graphene channel layer extending between the first metals and on the first metals, and a source electrode and a drain electrode on both edges of the graphene channel layer.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional application of U.S. application Ser.No. 13/224,941, filed on Sep. 2, 2011, now allowed, which claims thebenefit of Korean Patent Application No. 10-2011-0032192, filed on Apr.7, 2011, in the Korean Intellectual Property Office, the entire contentsof each of which is incorporated herein by reference.

BACKGROUND

1. Field

Example embodiments relate to graphene electronic devices and methods offabricating the same.

2. Description of the Related Art

Graphene having a 2-dimensional hexagonal carbon structure is a materialthat can replace semiconductors. Graphene is a zero gap semiconductor,and has a carrier mobility of 100,000 cm²V⁻¹s⁻¹ which is about 100 timesgreater than that of conventional silicon at room temperature.Therefore, graphene may be applied to higher speed operating devices,for example, radio frequency (RF) devices.

When a graphene nano-ribbon (GNR) has a channel width of 10 nm or less,a band gap may be formed in the GNR due to the size effect. Accordingly,a field effect transistor that can be operated at room temperature maybe fabricated using the GNR. A graphene electronic device refers to anelectronic device, e.g., a field effect transistor, using a graphene.When a graphene electronic device is fabricated by transferring grapheneon a substrate, the graphene may be damaged.

SUMMARY

Example embodiments provide methods of fabricating a graphene electronicdevice, in which graphene is prevented or impeded from contacting aphotoresist by forming a metal protection layer therebetween beforeremoving a metal catalyst layer under the graphene after directlygrowing the graphene on a substrate. Additional aspects will be setforth in part in the description which follows and, in part, will beapparent from the description, or may be learned by practice of exampleembodiments.

According to example embodiments, a graphene electronic device mayinclude a gate oxide on a conductive substrate, the conductive substrateconfigured to function as a gate electrode, a pair of first metals onthe gate oxide, the pair of the first metals separate from each other, agraphene channel layer extending between the pair of the first metalsand on the pair of the first metals; and a source electrode and a drainelectrode on both edges of the graphene channel layer.

The source electrode and the drain electrode may be formed of Au. Thesource electrode and the drain electrode may be formed to have athickness in a range from about 10 nm to about 1,000 nm. The graphenechannel layer may be a mono-layered graphene or a bi-layered graphene.The first metals may be bi-layered metal layers. The first metals may beCu/Ni layers or Au/Ni layers.

According to example embodiments, a graphene electronic device mayinclude a pair of first metals on a substrate, the pair of the firstmetals separate from each other, a graphene channel layer extendingbetween the pair of the first metals and on the pair of the firstmetals, a source electrode and a drain electrode on both edges of thegraphene channel layer, a gate oxide covering the graphene channel layerbetween the source electrode and the drain electrode, and a gateelectrode on the graphene channel layer between the source electrode andthe drain electrode.

According to example embodiments, a method of fabricating a grapheneelectronic device may include forming a gate oxide on a conductivesubstrate, the conductive substrate configured to function as a gateelectrode, forming a first metal layer on the gate oxide, the firstmetal layer configured to function as a catalyst layer, forming agraphene layer on the first metal layer, forming a metal protectionlayer on the graphene layer; sequentially patterning the metalprotection layer, the graphene layer, and the first metal layer using afirst photoresist pattern, and exposing the graphene layer in a channelformation region by wet etching the metal protection layer and the firstmetal layer using a second photoresist pattern.

The graphene layer may be formed at a temperature in a range from about550° C. to about 650° C. by inductively coupled plasma-chemical vaporeddeposition (ICP-CVD). Patterning the metal protection layer with thesecond photoresist pattern may include forming a source electrode and adrain electrode, and the graphene electronic device may be a fieldeffect transistor.

According to example embodiments, a method of forming a grapheneelectronic device may include forming a first metal layer on asubstrate, the first metal layer configured to function as a catalystlayer, forming a graphene layer on the first metal layer, forming ametal protection layer on the graphene layer, sequentially patterningthe metal protection layer, the graphene layer, and the first metallayer using a first photoresist pattern, exposing the graphene layer ina channel formation region by wet etching the metal protection layer andthe first metal layer using a second photoresist pattern, forming a gateoxide covering the exposed graphene layer, and forming a gate electrodeon the gate oxide.

BRIEF DESCRIPTION OF THE DRAWINGS

These and/or other aspects will become apparent and more readilyappreciated from the following description of example embodiments, takenin conjunction with the accompanying drawings of which:

FIG. 1 is a schematic cross-sectional view of a structure of a grapheneelectronic device according to example embodiments;

FIG. 2 is a plan view of the graphene electronic device of FIG. 1;

FIG. 3 is a schematic cross-sectional view of a structure of a grapheneelectronic device according to example embodiments;

FIG. 4 is a plan view of the graphene electronic device of FIG. 3;

FIGS. 5A through 5D are cross-sectional views showing a method offabricating a graphene electronic device according to exampleembodiments; and

FIGS. 6A through 6E are cross-sectional views showing a method offabricating a graphene electronic device according to exampleembodiments.

DETAILED DESCRIPTION

Reference will now be made in detail to example embodiments, examples ofwhich are illustrated in the accompanying drawings, wherein thethicknesses of layers and regions are exaggerated for clarity and likereference numerals are used to indicate substantially identical elementsthroughout and the descriptions thereof will not be repeated.

Although the terms first, second, etc. may be used herein to describevarious elements, these elements should not be limited by these terms.These terms are only used to distinguish one element from another. Forexample, a first element could be termed a second element, and,similarly, a second element could be termed a first element, withoutdeparting from the scope of example embodiments. As used herein, theterm “and/or” includes any and all combinations of one or more of theassociated listed items.

It will be understood that, if an element is referred to as being“connected” or “coupled” to another element, it can be directlyconnected, or coupled, to the other element or intervening elements maybe present. In contrast, if an element is referred to as being “directlyconnected” or “directly coupled” to another element, there are nointervening elements present. Other words used to describe therelationship between elements should be interpreted in a like fashion(e.g., “between” versus “directly between,” “adjacent” versus “directlyadjacent,” etc.).

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of exampleembodiments. As used herein, the singular forms “a,” “an” and “the” areintended to include the plural forms as well, unless the context clearlyindicates otherwise. It will be further understood that the terms“comprises,” “comprising,” “includes” and/or “including,” if usedherein, specify the presence of stated features, integers, steps,operations, elements and/or components, but do not preclude the presenceor addition of one or more other features, integers, steps, operations,elements, components and/or groups thereof.

Spatially relative terms (e.g., “beneath,” “below,” “lower,” “above,”“upper” and the like) may be used herein for ease of description todescribe one element or a relationship between a feature and anotherelement or feature as illustrated in the figures. It will be understoodthat the spatially relative terms are intended to encompass differentorientations of the device in use or operation in addition to theorientation depicted in the figures. For example, if the device in thefigures is turned over, elements described as “below” or “beneath” otherelements or features would then be oriented “above” the other elementsor features. Thus, for example, the term “below” can encompass both anorientation that is above, as well as, below. The device may beotherwise oriented (rotated 90 degrees or viewed or referenced at otherorientations) and the spatially relative descriptors used herein shouldbe interpreted accordingly.

Example embodiments are described herein with reference tocross-sectional illustrations that are schematic illustrations ofidealized embodiments (and intermediate structures). As such, variationsfrom the shapes of the illustrations as a result, for example, ofmanufacturing techniques and/or tolerances, may be expected. Thus, theregions illustrated in the figures are schematic in nature and theirshapes do not necessarily illustrate the actual shape of a region of adevice and do not limit the scope.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which example embodiments belong. Itwill be further understood that terms, such as those defined in commonlyused dictionaries, should be interpreted as having a meaning that isconsistent with their meaning in the context of the relevant art andwill not be interpreted in an idealized or overly formal sense unlessexpressly so defined herein.

FIG. 1 is a schematic cross-sectional view of a structure of a grapheneelectronic device 100 according to example embodiments. FIG. 2 is a planview of the graphene electronic device 100 of FIG. 1. FIG. 1 is across-sectional view taken along a line I-I′ of FIG. 2.

Referring to FIGS. 1 and 2, a gate oxide 112 may be formed on a siliconsubstrate 110. The gate oxide 112 may be formed to have a thickness in arange from about 100 nm to about 300 nm using silicon oxide. The siliconsubstrate 110 may be a conductive substrate and may also be referred toas a gate electrode. Instead of the silicon substrate 110, anotherconductive substrate may be used.

A pair of first metals 122 and 124 separated by a predetermined or givendistance from each other may be formed on the gate oxide 112. The firstmetals 122 and 124 may be metal layers formed by patterning a metallayer (not shown). The first metals 122 and 124 may be a bi-layeredmetal layer, and may be a copper (Cu)/nickel (Ni) layer or a gold(Au)/Ni layer. Cu or Au formed on the gate oxide 112 may have athickness in a range from about 100 nm to about 500 nm. Ni formed on theCu or Au may have a thickness in a range from about 10 nm to about 30nm.

A graphene channel layer 130 may be formed on the first metals 122 and124 to extend therebetween. The graphene channel layer 130 may contactthe gate oxide 112 between the first metals 122 and 124. The graphenechannel layer 130 may be formed by patterning a graphene layer formed bya chemical vapor deposition (CVD) method on the first metals 122 and124. The first metals 122 and 124 perform as catalysts for growinggraphene. The graphene may be a mono-layered graphene or a bi-layeredgraphene. Accordingly, the graphene channel layer 130 obtained bypatterning graphene has a mono-layered structure or a bi-layeredstructure.

A source electrode 142 and a drain electrode 144 may be respectivelyformed on both edges of the graphene channel layer 130. The sourceelectrode 142 and the drain electrode 144 may be respectively formeddirectly on or over the first metals 122 and 124 with substantially thesame shapes as the first metals 122 and 124. The source electrode 142and the drain electrode 144 may be formed to have a thickness in a rangefrom about 10 nm to about 1000 nm using Au or a metal other than Au. Aumay form a desirable contact with graphene and may be readily dry etchedor wet etched.

When the graphene channel layer 130 having a width W in a range fromabout 1 nm to about 20 nm is formed, the graphene channel layer 130 mayhave a band gap due to a size effect the same as semiconductorcharacteristics. Accordingly, the graphene electronic device 100 of FIG.1 may be a back gate field effect transistor. The graphene electronicdevice 100 may be able to be operated at room temperature.

In the graphene electronic device 100 according to example embodiments,the graphene channel layer 130 may be formed without a transferringprocess. Therefore, damage of the graphene channel layer 130 during atransferring process may be avoided.

FIG. 3 is a schematic cross-sectional view of a structure of a grapheneelectronic device 200 according to example embodiments. FIG. 4 is a planview of the graphene electronic device 200 of FIG. 3. FIG. 3 is across-sectional view taken along a line III-III′ of FIG. 4.

Referring to FIGS. 3 and 4, an insulating layer 212 may be formed on asilicon substrate 210. The insulating layer 212 may be formed to have athickness in a range from about 100 nm to about 300 nm using siliconoxide. When an insulating substrate is used instead of the siliconsubstrate 210, the insulating layer 212 may be omitted.

A pair of first metals 222 and 224 separated by a predetermined or givendistance from each other may be formed on the insulating layer 212. Thefirst metals 222 and 224 may be metal layers formed by patterning ametal layer (not shown). The first metals 222 and 224 may be abi-layered metal layer, and may be a Cu/Ni layer or an Au/Ni layer. Cuor Au formed on the insulating layer may have a thickness in a rangefrom about 100 nm to about 500 nm. Ni formed on the Cu or Au may have athickness in a range from about 10 nm to about 30 nm.

A graphene channel layer 230 may be formed on the first metals 222 and224 to extend therebetween. The graphene channel layer 230 may contactthe gate oxide 212 between the first metals 222 and 224. The graphenechannel layer 230 may be formed by patterning a graphene layer formed bya CVD method on the first metals 222 and 224 and the insulating layer212 therebetween. The first metals 222 and 224 perform as catalysts forgrowing graphene. The graphene may be a mono-layered graphene or abi-layered graphene. Accordingly, the graphene channel layer 230obtained by patterning the graphene has a mono-layered structure or abi-layered structure.

A source electrode 242 and a drain electrode 244 may be respectivelyformed on both edges of the graphene channel layer 230. The sourceelectrode 242 and the drain electrode 244 may be respectively formeddirectly on or over the first metals 222 and 224 with substantially thesame shapes as the first metals 222 and 224. The source electrode 242and the drain electrode 244 may be formed to have a thickness in a rangefrom about 10 nm to about 1000 nm using Au or a metal other than Au.

A gate oxide 250 may be formed on the graphene channel layer 230 usingsilicon oxide. A gate electrode 260 may be formed on the gate oxide 250using a metal, for example, aluminum.

When the graphene channel layer 230 having a width W in a range fromabout 1 nm to about 20 nm is formed, the graphene channel layer 230 mayhave a band gap due to a size effect the same as semiconductorcharacteristics. Accordingly, the graphene electronic device 200 of FIG.3 may be a top gate field effect transistor. The graphene electronicdevice 200 may be able to be operated at room temperature.

FIGS. 5A through 5D are cross-sectional views showing a method offabricating a graphene electronic device according to exampleembodiments. Referring to FIG. 5A, a gate oxide 312 may be formed on asubstrate 310. The substrate 310 may be a conductive silicon substratedoped with a dopant, and performs as a gate electrode. The gate oxide312 may be a silicon oxide formed by thermally oxidizing the substrate310, and may have a thickness in a range from about 100 nm to about 300nm.

A first metal layer 320 may be formed on the gate oxide 312. The firstmetal layer 320 may be deposited using Cu or Au to a thickness in arange from about 100 nm to about 500 nm by a sputtering method. A secondmetal layer 321, for example, a Ni layer, may further be formed on thefirst metal layer 320 to a thickness in a range from about 10 nm toabout 30 nm. The first metal layer 320 and the second metal layer 321perform as catalysts for growing graphene.

A graphene layer 330 may be deposited on the second metal layer 321 at atemperature in a range from about 550° C. to about 650° C. byinductively coupled plasma-chemical vapored deposition (ICP-CVD). Thegraphene layer 330 may be formed in a mono-layered structure or abi-layered structure. Because a CVD method that is performed at atemperature of about 1,000° C. is not used to form the graphene layer330, damage to, for example, the substrate 310 by a high temperature maybe avoided.

A metal protection layer 340 may be deposited on the graphene layer 330.The metal protection layer 340 may be formed to have a thickness in arange from about 10 nm to about 1,000 nm using Au.

Referring to FIG. 5B, after forming a photoresist 345 on the metalprotection layer 340, the metal protection layer 340, the graphene layer330, the second metal layer 321, and the first metal layer 320 exposedby the photoresist 345 may be sequentially dry etched as in the statedorder.

FIG. 5C is a plan view of the patterned result from which thephotoresist 345 is removed. Referring to FIG. 5C, the shape of thepatterned metal protection layer 340 includes a channel formation regionA1 having a predetermined or given width W and electrode formationregions A2 on both edges of the channel formation region A1. The channelformation region A1 has the width W in a range of about 1 nm to about 20nm.

Referring to FIG. 5D, after forming a photoresist 347 on the electrodeformation regions A2, metal layers in the channel formation region A1that is exposed by the photoresist 347 may be selectively removed by wetetching. The metal layers may be the metal protection layer 340, thesecond metal layer 321, and the first metal layer 320. A wet etchant maybe, for example, diluted hydrofluoric (DHF) acid. The graphene layer 330may be exposed in the channel formation region A1. The exposed graphenelayer 330 may be a channel layer 332. When the length of the channellayer 332 is extended to some degree, the channel layer 332 may contactthe gate oxide 312 (refer to FIG. 1).

Both edges of the channel layer 332 extend to the electrode formationregions A2. In the electrode formation regions A2, a source electrode342 and a drain electrode 344 may be formed on the channel layer 332 bypatterning the metal protection layer 340. Also, in the electrodeformation regions A2, first metal layers 322 and 324 may be formed underthe graphene layer 330. The source electrode 342 and the drain electrode344 may have substantially the same shapes as that of the first metallayers 322 and 324.

According to example embodiments, a graphene channel layer may bedirectly formed on a substrate without a transferring process.Accordingly, damage to the graphene channel layer in the transferringprocess may be avoided. Also, because graphene is grown at a relativelylow temperature, damage to the substrate due to a high temperature maybe avoided. Also, because a graphene channel layer is formed by wetetching graphene after forming a metal protection layer on the graphene,the contact of a photoresist with the graphene may be prevented orimpeded by the metal protection layer, thereby preventing or impedingthe loss of inherent characteristics of the graphene.

FIGS. 6A through 6E are cross-sectional views showing a method offabricating a graphene electronic device according to exampleembodiments. Referring to FIG. 6A, an insulating layer 412 may be formedon a substrate 410. When the substrate 410 is formed of an insulatingmaterial, the insulating layer 412 may be omitted.

A first metal layer 420 may be formed on the insulating layer 412. Thefirst metal layer 420 may be formed of Cu or Au to a thickness in arange of about 100 nm to about 500 nm by a sputtering method. A secondmetal layer 421, for example, an Ni layer, may further be formed on thefirst metal layer 420 to a thickness in a range of about 10 nm to about30 nm. The first metal layer 420 and the second metal layer 421 mayperform as catalyst layers for growing graphene.

A graphene layer 430 may be deposited on the second metal layer 421 at atemperature in a range from about 550° C. to about 650° C. by ICP-CVD.The graphene layer 430 may be formed in a mono-layered structure or abi-layered structure. Because a CVD method that is performed at atemperature of about 1,000° C. is not used to form the graphene layer430, damage to, for example, the substrate 410 by a high temperature maybe avoided.

A metal protection layer 440 may be deposited on the graphene layer 430.The metal protection layer 440 may be formed to have a thickness in arange from about 10 nm to about 1,000 nm using Au.

Referring to FIG. 6B, after forming a photoresist 445 on the metalprotection layer 440, the metal protection layer 440, the graphene layer430, the second metal layer 421, and the first metal layer 420 exposedby the photoresist 445 may be sequentially dry etched in the statedorder.

FIG. 6C is a plan view of the patterned result from which thephotoresist 445 may be removed. Referring to FIG. 6C, the shape of thepatterned metal protection layer 440 includes a channel formation regionA1 having a predetermined or given width W and electrode formationregions A2 on both edges of the channel formation region A1. The channelformation region A1 has the width W in a range of about 1 nm to about 20nm.

Referring to FIG. 6D, after forming a photoresist 447 on the electrodeformation regions A2, metal layers in the channel formation region A1that is exposed by the photoresist 447 may be selectively removed by wetetching. The metal layers may be the metal protection layer 440, thesecond metal layer 421, and the first metal layer 420. A wet etchant maybe, for example, diluted hydrofluoric (DHF) acid. The graphene layer 430may be exposed in the channel formation region A1. The exposed graphenelayer 430 may be a channel layer 432.

Both edges of the channel layer 432 extend to the electrode formationregions A2. In the electrode formation regions A2, a source electrode442 and a drain electrode 444 may be formed on the channel layer 432 bypatterning the metal protection layer 440. Also, in the electrodeformation regions A2, first metal layers 422 and 424 may be formed underthe graphene layer 430. The source electrode 442 and the drain electrode444 may have substantially the same shapes as that of the first metallayers 422 and 424.

Referring to FIG. 6E, the photoresist 447 may be removed. When thelength of the channel layer 432 is extended to some degree, the channellayer 432 may contact the gate oxide 412. A gate oxide 450 covering thechannel layer 432 may be formed on the insulating layer 412. Afterforming a metal layer (not shown) on the gate oxide 450, a gateelectrode 460 may be formed by patterning the metal layer.

In the method of fabricating a graphene electronic device according toexample embodiments, because a metal protection layer is formed on agraphene layer when a metal catalyst layer formed under the graphenelayer is wet etched, a direct contact between a photoresist pattern andthe graphene layer may be prevented or impeded. Therefore, damage tographene by the photoresist remaining when the photoresist pattern isremoved may be prevented or impeded.

It should be understood that example embodiments described thereinshould be considered in a descriptive sense only and not for purposes oflimitation. Descriptions of features or aspects within each embodimentshould typically be considered as available for other similar featuresor aspects in other example embodiments.

What is claimed is:
 1. A graphene electronic device comprising: a pairof first metals on a substrate, the pair of the first metals separatefrom each other; a graphene channel layer extending between the pair ofthe first metals and on the pair of the first metals; a source electrodeand a drain electrode on both edges of the graphene channel layer; agate oxide covering the graphene channel layer between the sourceelectrode and the drain electrode; and a gate electrode on the graphenechannel layer between the source electrode and the drain electrode,wherein the source electrode and the drain electrode are directly overthe pair of first metals with a portion of the graphene channel layertherebetween.
 2. The graphene electronic device of claim 1, wherein thesource electrode and the drain electrode are formed of Au.
 3. Thegraphene electronic device of claim 1, wherein the source electrode andthe drain electrode are formed to have a thickness in a range of about10 nm to about 1,000 nm.
 4. The graphene electronic device of claim 1,wherein the graphene channel layer is a mono-layered graphene or abi-layered graphene.
 5. The graphene electronic device of claim 1,wherein the first metals are bi-layered metal layers.
 6. The grapheneelectronic device of claim 5, wherein the first metals are Cu/Ni layersor Au/Ni layers.
 7. The graphene electronic device of claim 1, whereinthe source electrode and the drain electrode have the same bottom shapeas the pair of first metals.